Semiconductor devices, esp. opto-electronic components - where metal layer with high work function forms enhancement zone in semiconductor, esp. for laser diodes or Leds

摘要

The device includes a metal layer (I) confining minority charge carriers to a narrow zone. A semiconductor zone (a) is covered with a metal (I) with a work function (Wm) higher than that of zone (a), so an enhancement layer (b) is formed next to metal (I). Zone (a) pref. has weak p-doping, with a metal layer (I) on one side and an n-type semiconductor zone (c) on the other side. The semiconductor (abc) is pref. Si, whereas metal (I) is tungsten- or nickel-silicide. Alternatively, the semiconductor is GaAs and metal (I) is Pt, Ni, or Au, esp. where zone (a) is GaAs, and zone (c) is Ga(1-x)Al(x)As, where x is 0.3-0.5. A simple method of achieving charge carrier confinement is combined with effective removal of heat.