Alloyed metal contact prodn. on oriented semiconductor crystal - by rastering surface with intense pulsed laser light before applying metal assists alloying

摘要

In the prodn. of alloyed metal contact layers on crystal-oriented semiconductor surfaces by energy pulse radiation, the intended area of the semiconductor surface is first rastered with a close sequence of intensive laser light pulses. Then the metal layer is applied and alloyed with the semiconductor surface in conventional manner. The process is used on (100) oriented Si crystals used for the prodn. of transistors, esp. thyristors contg. controllable short circuits produced by integrated FETs. Pretreatment favours alloying and the formation of alloy layers of uniform thickness.