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Etching soln. based on potassium ferricyanide and soda - for selective removal of photo:lacquer or metal films obtd. by vapour deposition, esp. in mfg. thin film circuits
Etching soln. based on potassium ferricyanide and soda - for selective removal of photo:lacquer or metal films obtd. by vapour deposition, esp. in mfg. thin film circuits
The etchant consists of an aq. soin. contg. Na 2CO3; potassium ferricyanide; potassium peroxydisulphate; tri-potassium citrate; and aluminium hydroxyacetate or sodium acetate. The pref. soln. uses 1 litre of water in which are dissolved 0.5-1120 g Na 2CO3;0.5-420 g potassium ferricyanide; 0.5-50 g potassium peroxydisulphate; 0.5-45 g tri-potassium citrate; and 0.01-2 g aluminium hydroxyacetate of sodium acetate. The etchant is pref. used to create thin film structures, the etching temp. being varied to increase the selectivity of the etchant. Used for mfr. of resistance- or RC- networks; liq. crystal displays; thin film microcircuits etc.
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机译:蚀刻剂由水溶液组成。如此续Na 2CO3;铁氰化钾;过氧二硫酸钾;柠檬酸三钾和羟基乙酸铝或乙酸钠。偏好。 soln。使用1升水,其中溶解有0.5-1120 g Na 2CO3; 0.5-420 g铁氰化钾; 0.5-50克过氧二硫酸钾; 0.5-45克柠檬酸三钾;和0.01-2g乙酸钠的羟基乙酸铝。蚀刻剂是优选的。用于制造薄膜结构的蚀刻温度。改变以增加蚀刻剂的选择性。用于制造商。电阻或RC网络的;液体水晶显示器;薄膜微电路等
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