To the embodiment of a zone doped of a type of conductivity in a semi - conductor, as well as a transistor manufactured according to this

• 1. 用于在半导体基底中形成掺杂区域的掺杂剂油墨组合物,以及用于制造掺杂剂油墨组合物的方法 [P] . 中国专利： CN103890107A . 2014-06-25
• 2. 使用非接触印刷工艺在半导体衬底中形成掺杂区域的方法以及使用非接触印刷来形成该掺杂区域的含掺杂剂的墨水 [P] . 中国专利： CN101965628A . 2011-02-02
• 3. To the embodiment of a zone doped of a type of conductivity in a semi - conductor, as well as a transistor manufactured according to this [P] . 法国专利： FR2288391A1 . 1976-05-14

  机译： 对于在半导体中掺杂有导电类型的区域的实施例以及根据该方法制造的晶体管

• 4. Brief description of embodiments of a semi - conductor with a zone strongly located between areas lightly doped, for the manufacture of the transistors [P] . 法国专利： FR2735904B1 . 1997-07-18

  机译： 用于制造晶体管的半导体的实施例的简要说明，该半导体的区域强烈地位于轻掺杂区域之间。

• 5. Method of producing a semi-conductor with a highly doped zone situated between lightly doped zones, for the manufacture of transistors [P] . 美国专利： US5705410A . 1998-01-06

  机译： 用于制造具有在轻掺杂区之间的高掺杂区的半导体的方法，用于制造晶体管

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• 2. A Parallel Type Micro-Robotic System for Semi-Conductor Manufacturing Machines: Preliminary Results [C] . Michael Pumphrey, Aylar Abouzarkhanifard, Lihong Zhang, IEEE/ASME International Conference on Advanced Intelligent Mechatronics . 2021
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• 5. Study of Semi-conductors. (V) : Dielectric Properties of Spinel Type Semi-conductor [O] . Abe Kiyoshi, Tanaka Tetsuro, Miura Shigeru 1951

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