Encapsulated semiconductor diode mfr. - includes forming metallised surface around dielectric enabling operation at 30 ghz range

摘要

In the process for forming an encapsulated diode for use at high frequencies, the diode is electrically and thermally connected by one of its faces to a metal support. The diode is surrounded by a ring of dielectric material soldered to the support. The dielectric ring has two plane surfaces which are coated with metal. In the course of the construction of the diode, a metallic sleeve is inserted into the ring of dielectric material in order to ensure an electric connection. The electrical connection is thus established between the diode and the metallic surface of the dielectric ring opposite the support. A soldered connection is then formed between this surface and the metallic sleeve. The dielectric material may be formed by a section of glass fiber.