PLANAR TECHNOLOGY HOTEROJUNCTION PHOTOTRANSISTOR AND METHOD FOR MANUFACTURING SUCH PHOTOTRANSISTOR

摘要

The object of the invention is to facilitate the contacting, in planar technology, of the phototransistor base, located in the intermediate layer of an NPN stack, as well as the accurate localization of the PN junction. / P P THEREFORE, THE SUPERIOR SEMICONDUCTOR LAYER 3 FIRST RECEIVES A FIRST DIFFUSION OF DOPING IMPURITY P IN A FIRST REGION 22 PENETRATING SLIGHTLY 220 IN THE LOWER LAYER 2 AND FORMING THE BASIC REGION; THEN AN IMPURITY N OF THE OPPOSITE TYPE IS IMPLANTED IN A SECOND REGION 23 LOCATED INSIDE THE FIRST AND FORMING THE REGION OF THE TRANSMITTER, THE SUBSTRATE CONSTITUTING THE COLLECTOR. THE BASIC CONNECTIONS 26 AND TRANSMITTER 27 ARE TAKEN ON THE FREE SURFACE, THE COLLECTOR BEING CONNECTED WITH THE SUBSTRATE SIDE. / P P APPLICATION TO FIBER OPTIC TELECOMMUNICATIONS. / P