Phototransistor is heterojunction in the planar technology and method of manufacturing such a phototransistor

摘要

The invention aims to facilitate the establishment of contact, in the planar technology, the base of the phototransistor located in the intermediate layer of a stack npn, as well as the precise location of the pn junction. / p & & p & for this purpose, the semiconductor layer upper 3 receives, firstly, a first diffusion doping impurity p in a first region 22 penetrating slightly 220 in the lower layer 2 and forming the region of the base; then it is installed a impurity n of the type opposes in a second region 23 located to the inside of the first and forming the region of the sender, the substrate constituting the collector. The connections of the sender of the base 26 and 27 are engaged on the free face, the collector being connected to the dimension of the substrate. / p & & p & application to the telecommunications by optical fibre.