首页>
外国专利>
EPITAXIAL TECHNIQUES FOR ELECTRO-OPTICAL APPLICATIONS
EPITAXIAL TECHNIQUES FOR ELECTRO-OPTICAL APPLICATIONS
展开▼
机译:光电应用的外延技术
展开▼
页面导航
摘要
著录项
相似文献
摘要
A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb1-wCdw]a[S]1-a wherein w varies between zero and fifteen hundredths, inclusive, and a=0.500+/-0.003), deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers.
展开▼
机译:一种可变温度方法,用于制备单相(例如,面心立方)三元硫属元素化物合金(例如,硫化镉铅,[Pb1-wCdw] a [S] 1-a)的单层和多层外延层w在沉积在氟化钡,BaF2的基底上的零到百分之十五(含)和a = 0.500 +/- 0.003之间变化,并与同时升华的铅合金和硫族化物源保持接近热力学平衡。在制备期间,改变衬底的温度,从而沿生长方向提供具有梯度组成和预定的电学和光学性质的外延层。这种生长技术可用于生产红外透镜,窄带检测器和双异质结激光器。
展开▼