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Method for characterizing the oxygen contents of Czochralski grown silicon rods
Method for characterizing the oxygen contents of Czochralski grown silicon rods
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机译:表征直拉法生长的硅棒中氧含量的方法
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摘要
The oxygen content of Czochralski grown silicon rods is characterized by annealing portions of the rods at selected times and temperatures and measuring the resistivity shift which is then related to the oxygen content of that portion of the rod. The rod can be selected for use in unipolar or bipolar device manufacture prior to cutting the rod into wafers.
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