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batch still for framstellning of crystalline silicon with a jernhalt as less a 1 / 20 of jernhalten in mother liquor

机译:该批次仍用于用晶母进行微晶化,母液中的晶母含量少于1 / 20

摘要

A process for producing crystalline silicon having an iron concentration less than about one-twentieth of the iron concentration of the mother liquor. Iron contaminated silicon is introduced into a mold and the mold walls are maintained at a temperature sufficient to cause silicon crystalline growth. The mother liquor is agitated to wash the exposed surfaces of the growing silicon crystals and to prevent the freezing of the top surface of the mother liquor. A hollow crystalline silicon ingot is formed and both the inner zone centrally of the crystalline ingot and the outer zone adjacent to the mold wall are removed leaving an inner zone having an iron concentration less than one-twentieth of the iron concentration of the original mother liquor.
机译:一种生产铁浓度小于母液铁浓度约二十分之一的结晶硅的方法。将受铁污染的硅引入模具中,并将模具壁保持在足以引起硅晶体生长的温度下。搅拌母液以洗涤生长的硅晶体的暴露表面并防止母液顶面冻结。形成中空的结晶硅锭,并且除去结晶锭中心的内部区域和与模具壁相邻的外部区域,从而留下内部区域,该内部区域的铁浓度小于原始母液中铁浓度的二十分之一。 。

著录项

  • 公开/公告号SE426231B

    专利类型

  • 公开/公告日1982-12-20

    原文格式PDF

  • 申请/专利权人 INTERLAKE INC;

    申请/专利号SE19770007100

  • 发明设计人 N H * KEYSER;J C * CLINE;

    申请日1977-06-20

  • 分类号C01B33/02;

  • 国家 SE

  • 入库时间 2022-08-22 10:58:04

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