BIPOLAR TRANSISTOR FABRICATION PROCESS WITH AN ION IMPLANTED EMITTER

摘要

BIPOLAR TRANSISTOR FABRICATION PROCESSWITH AN ION IMPLANTED EMITTERAbstract of the DisclosureA very high current ion implanted emitter is formed ina diffused base. Windows are made through the siliconnitride and silicon dioxide layers to both the basecontact and the emitter regions using a resist mask.These regions are than protected by resist and thecollector contact window is opened through the re-mainder of the silicon dioxide layer to the reachthrough region. A screen oxide is grown in all theexposed areas after removal of the resist mask. Aresist mask is applied which covers only the base andSchottky anode regions. Arsenic is then implantedthrough the exposed screened areas followed by anetch back step to remove the top damaged layer. Withsome remaining screen oxide serving as a cap, theemitter drive-in is done.FI 9-78-055