Gunn diode-type unipolar electron transfer device

摘要

1. A unipolar electron transfer device of the Gunn diode type, working in the microwave range, of which the semiconductor body comprises a contact layer (5) carrying a first contact-forming metallisation (10), this layer (5) being formed by a first highly doped material of n**+ polarity, and a transit layer (7) formed from the same but less doped material of n polarity, these two layers (5 and 7) being supported by a buffer layer (8) and by a substrate (9) of the same material and same doping rate as the contact layer (5), the substrate (9) forming the anode contact of the device and carrying a second contact-forming metallisation (11), the injection of electrons from the contact layer (5) towards the transit layer (7) being performed by tunnel effect through a double heterojunction formed by a layer (6) of a second and undoped material having a tunnel barrier in the conduction band, this undoped layer (6) being interposed between said contact layer (5) and the said transit layer (7).