Process for producing cadmium sulphide selenide (CdSxSe1-x) mixed crystal layers

摘要

In a process for producing cadmium sulphide selenide (CdSxSe1-x) mixed crystal layers using cathode sputtering, the starting substance, cadmium selenide (CdSe) is cathode-sputtered in a gas mixture composed of an inert gas, such as argon, and a specified proportion (for example up to 5% by volume) of hydrogen sulphide, in particular and expediently in a flowing gas mixture with a regulated flow rate. The process makes it possible to establish, in a simple way, certain x values which may be altered continuously or abruptly even during the growth of the layer. The mixed crystal layers obtained are advantageously used as photoconductors in electrophotography or for a display drive. As an interlayer in multilayer systems, they are used to establish the work function of charge carriers.