首页> 外国专利> OVERLOAD PROTECTION DEVICE FOR INTEGRATED CIRCUIT AND INTEGRATED OVERLOAD PROTECTION CIRCUIT

OVERLOAD PROTECTION DEVICE FOR INTEGRATED CIRCUIT AND INTEGRATED OVERLOAD PROTECTION CIRCUIT

机译:集成电路的过载保护装置和集成的过载保护电路

摘要

The invention relates to an integrated overload protection circuit for protecting a bipolar transistor used in common transmitter configuration. According to the invention, the protection circuit comprises a bipolar transistor Q2. OF A TYPE OPPOSED TO THAT OF THE PROTECTED AMPLIFIER TRANSISTOR Q1; THE PROTECTIVE TRANSISTOR Q2 IS CONNECTED, BY ITS BASE, TO THE COLLECTOR OF THE AMPLIFIER TRANSISTOR Q1 AND BY ITS COLLECTOR, TO THE POWER SUPPLY TERMINAL WHICH IS NOT CONNECTED TO A TERMINAL V OF THE LOAD RESISTOR R OF THE PROTECTED DEVICE; THE TRANSMITTER OF THE PROTECTIVE TRANSISTOR Q2 IS PREFERABLY CONNECTED TO THE BASE OF THE PROTECTED TRANSISTOR Q1 BY A PROTECTIVE RESISTOR R; INPUTS OF THE PROTECTED TRANSISTOR Q1 ARE PROVIDED FOR THE INTERCONNECTION OF THE TRANSMITTER OF THE PROTECTIVE TRANSISTOR Q2 AND A TERMINAL OF THE RESISTANCE OF PROTECTION R. / P P THE INVENTION APPLIES IN PARTICULAR TO DIFFERENTIAL AMPLIFIERS AND OPERATIONAL. / P
机译:集成过载保护电路技术领域本发明涉及一种集成过载保护电路,用于保护在普通发射机配置中使用的双极晶体管。根据本发明,保护电路包括双极晶体管Q2。与受保护的放大器晶体管Q1相对的类型;保护晶体管Q2与其基座,放大器晶体管Q1的集电极和其集电器相连,而该电源端子未与受保护设备的负载电阻R的端子V相连;保护晶体管Q2的发射器优选地通过保护电阻R连接到被保护晶体管Q1的基极。被保护的晶体管Q1的输入被提供用于保护性晶体管Q2的发射器和保护电阻R的终端的互连。

本发明尤其适用于不同的放大器和操作。

著录项

  • 公开/公告号FR2507819A1

    专利类型

  • 公开/公告日1982-12-17

    原文格式PDF

  • 申请/专利权人 RCA CORP;RCA CORP;

    申请/专利号FR19820010348

  • 发明设计人 HARFORD JACK RUDOLPH;

    申请日1982-06-14

  • 分类号H01L23/56;H01L27/06;H03F1/52;

  • 国家 FR

  • 入库时间 2022-08-22 10:00:54

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