Polycrystalline diamond and cemented carbide substrate and synthesizing process therefor

摘要

A polycrystalline diamond body infiltrated by a silicon atom- containing metal (e.g., silicon alloy) is bonded to a substrate comprising cemented carbide with a barrier of refractory material extending between the diamonds cemented together with silicon atom- containing binder and the substrate substantially precluding migration of the cementing medium (e.g., cobalt) from the carbide substrate into contact with the silicon atom-containing bonding medium in the diamond body. The process comprises subjecting a mass of diamond powder, a quantity of silicon atom-containing metal binder material, a cemented carbide body and a barrier made of material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof to the simultaneous application of elevated temperature and pressure.