VAPOR GROWTH OF HIGH-PURITY 3-5 GROUP SEMICONDUCTOR

摘要

PURPOSE:To increase purity of a III-V group semiconductor by a method wherein organic compound vapor of V group element is added to trichloride vapor of Vgroup element in an amount equal or up to three times. CONSTITUTION:A high resistance InP substrate 1 is placed on a quartz-made substrate holder 2. After replacing the atomosphere in a quartz tube 3 by hydrogen gas, the substrate is heated up to 670 deg.C and a source reaction region 4 is heated up to 800 deg.C. H2 gas of 500cm3/min containing triethylindium 0.5% and H2 gas of 500cm3/min containing phosphorous trichloride 0.18% and triethylphosphine 0.36% are introduced simultaneously from gas inlets 5, 6, respectively, and then the introduced gas from the gas inlets 5, 6 are replaced by Ar to cool the temperature within the reaction tube down to the room temperature. As compared with the case of introducing no triethylphosphine (introduction amount ratio 0), mobility of InP becomes about twice. In other words, the introduction amount of triethylphosphine added equal to or up to three times the introduction amount of PCl2 gives an effect in increasing mobility, thereby ensuring the enhanced purity.