Schottky diode, integrated circuit with a Schottky diode and method of making the same

摘要

A, operating in the high frequency range, for example, in the millimeter wave range semiconductor structure, for example a Schottky diode structure includes a buried layer (29) from nt-conductive material and a surface layer (20) of lightly n-doped material on which an a Schottky contact ( 25) is arranged. The n ⁺ -type layer provides a low series resistance, so that one can operate at high frequency ranges. The structure is compatible with the manufacturing process for MES field-effect transistors and thus can be incorporated into an integrated circuit.