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ELIMINATION PROCESS OF CRYSTAL DEFECTS PRODUCED IN N-TYPE LAYERS OF A SILICON SEMICONDUCTOR DEVICE BY PHOSPHORUS ION IMPLANTATION AND DEVICE PRODUCED BY THIS METHOD
ELIMINATION PROCESS OF CRYSTAL DEFECTS PRODUCED IN N-TYPE LAYERS OF A SILICON SEMICONDUCTOR DEVICE BY PHOSPHORUS ION IMPLANTATION AND DEVICE PRODUCED BY THIS METHOD
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机译:磷离子注入及通过该方法生产的器件消除了硅半导体器件N型层中产生的晶体缺陷的过程
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摘要
The invention relates to a semiconductor device and to a method of fully eliminating lattice defects in N-conductive zones of a semiconductor device which are generated by ion implantation of phosphorus. According to the invention, conductivity-determining ions like antimony or arsenic are implanted into phosphorus-doped zones of a semi-conductor device. A dosage of 1 to 10% of the phosphorus dose is used. The implantation of the antimony or arsenic takes place with the same, or with a greater implantation depth than the phosphorus depth. Subsequent to the antimony/arsenic implantation the device is annealed in an inert gas atmosphere at approximately 1000 DEG C.
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