A SEMICONDUCTOR MEMORY DEVICE IN WHICH SOFT ERRORS DUE TO ALPHA PARTICLES ARE PREVENTED

摘要

A semiconductor device having a function of preventing a soft error due to alpha particles. The device comprises a semiconductor substrate (1), a thin surface layer (2) formed on said semiconductor substrate (1) and a charge accumulation region (2a) formed in said surface layer (2). The conduction type of the surface layer (2) is opposite to the conduction type of the substrate (1) so that a potential barrier for electrons is formed between the surface layer (2) and the substrate (1). By the potential barrier, electrons derived from electron-hole pairs produced in the substrate by alpha particles can be interrupted from entering into the charge storage region (2a) so that a soft error can be prevented.