Brief description of embodiments of a semiconductor device comprising a field effect transistors information

摘要

Process for the manufacture of a semiconductor device having two regions juxtaposed 12, 16 of the types of conductivity opposite and adjacent to the surface, which together form a junction p - n 9 then perpendicular to the surface, and whose concentration of doping reduces towards the surface. / p & & p & in accordance with the invention, there is formed on a semiconductor substrate 1 is a side dimension of the layers buried of the n type and of type p, on which a layer is grown epitaxial has resistivity high. By heating, the gun drivers diffuse on the basis of the layers buried throughout the thickness of the layer epitaxial and in the substrate. By the choice of the donor and acceptor atoms appropriate (for example, boron and phosphorus in the silicon), there is obtained in the layer epitaxial of the regions of type n and p 12, 16, which form a junction p - n 9 perpendicular to the surface to the remainder of the compensation of diffusions lateral is operant on the basis of the layers buried. / p & & p & application: manufacture of semiconductor devices, 1 / p