Device possessing a circuit for transistors has the effect of a grid isolee complementary and a logic circuit integrated for injection in the same substrate semiconductor - conductor, as well as its method of manufacturing

摘要

The invention relates to a device has circuits integrated a semi - conductors and its method of manufacture. / p & & p & in this device uses a substrate on which a semi - conductor 1 comprising the first and second regions semi conducting - 3, 4 separated of one of the other, a plurality of regions third semi conducting - 7, 8 constituting the elements of a circuit that it forms in the region a semi conducting - 3 and a plurality of regions fourth semi conducting - 9 constituting the elements of a circuit misfet form in the second region semi conducting - 4, the region 3 possesses impurities which is a concentration of the upper is that of the second region semi conducting - 4). / p & & p & a particular application to circuits integrated cmisfet - it has a high density of integration and a speed of transmission high.