Irradiation arrangement with optoelectronic semiconductors for diathermally active infrared A radiation fields

摘要

Optoelectronic semiconducturs (1) are used for the irradiation arrangement of diathermally active infrared A radiation fields. A specific number of optoelectronic individual semiconductors (1) of low radiant power generate infrared A rays (3) which cover a radiation range from 800 to 1,200 nm. The individual radiators can also be constructed as chips with many individual radiators in the manner of integrated circuits. These individual radiators (1) are arranged in a carrier element (2) which can have the shape of a concave mirror or a half shell. IMAGE