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Semiconductor device esp. MISFET prodn. - using silicon nitride film obtd. by direct nitriding to prevent ion implanted impurity migration during heat treatment
Semiconductor device esp. MISFET prodn. - using silicon nitride film obtd. by direct nitriding to prevent ion implanted impurity migration during heat treatment
Semiconductor device, esp. MISFET prodn. involves implantation of an impurity in a semiconducting Si substrate and heating. The novel feature is that a Si3N4 film, esp a gate insulating film of the MISFET, is produced on the substrate by direct thermal nitriding, so that the total amt of ion implanted impurity is retained at the surface of the substrate after heating. Specifically, the Si3N4 film prevents redistribution of the implanted impurity from the substrate into the Si3N4 film when the substrate is heated to activate the impurity and correct damage to the substrate caused by ion implantation.
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机译:半导体器件,特别是MISFET产品包括在半导体Si衬底中注入杂质并加热。新颖的特征是通过直接热氮化在衬底上形成Si3N4膜,尤其是MISFET的栅绝缘膜,从而在加热后将离子注入的杂质的总量保留在衬底的表面。具体地,当衬底被加热以激活杂质并校正由离子注入引起的对衬底的损坏时,Si 3 N 4膜防止从衬底注入的杂质重新分布到Si 3 N 4膜中。
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