List of the voltage reference circuit of the forbidden band

摘要

The invention relates to a circuit which is incorporated by reference voltage which can use the transistors parasitic bijonction by the drain regions, the well of the p type and the monolithic substrate of circuits integrated of the cmos type. / p & & p & a first and a second amplifier transistor 32, 31 mounted in common collector are positioned so that the current passing through their junctions densities base - 10 are held in a ratio prescribed. The difference of the current densities creates a potential difference between the base - 10, this difference being used for producing a current which has a positive temperature coefficient. This current passes through a resistor 35 connected at the sender of the first transistor and produces a potential a positive temperature coefficient. The voltage present across the terminals of the first resistor 35 of the circuit of the sender of the first transistor 32 is added to the potential base - 10 of the first transistor in order to produce a voltage reference substantially independent of the temperature.