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List of the voltage reference and measurement circuit of the threshold voltage of a mos transistor, applicable to this list of the reference voltage.

机译:mos晶体管的阈值电压的参考电压和测量电路列表,适用于该参考电压列表。

摘要

P the present invention relates to a list of the voltage reference. / p & & p & this list is characterizes in that it comprises two transistors t and t of the mos type, one of the transistors t comprises a channel having a dimension is the same order of magnitude as the corresponding dimension of the extension with respect to the source and drain of transistor of the space charge area, the other dimension is small relative to the extension of the space charge region; the other transistor t comprises a channel whose dimensions are large, the two screws - to - respect to the corresponding dimensions of the extension of the space charge region, means are provided in order to carry out the difference of the threshold voltages of transistors t and t, this difference in threshold voltage representing the reference voltage. / p & & p & application to the power supply circuits integrated a larger scale. / p
机译:

本发明涉及电压基准的列表。 & &该列表的特征在于,它包括两个mos类型的晶体管t和t,其中一个晶体管t包括一个沟道,该沟道的尺寸与延伸部分相对于沟道的源极和漏极的尺寸相同。空间电荷区的晶体管,另一尺寸相对于空间电荷区的延伸较小;另一个晶体管t包括一个尺寸较大的通道,相对于空间电荷区域的延伸部分的相应尺寸,两个螺钉被提供以执行晶体管t和t的阈值电压之差。 t,该阈值电压差代表参考电压。 & &应用于电源电路的集成化规模更大。

著录项

  • 公开/公告号FR2447610B1

    专利类型

  • 公开/公告日1982-06-11

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A ENERGIE ATOMIQUE;

    申请/专利号FR19790002052

  • 发明设计人

    申请日1979-01-26

  • 分类号H01L27/04;G01R19/10;G01R31/26;H01L29/78;

  • 国家 FR

  • 入库时间 2022-08-22 12:30:38

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