首页> 外国专利> Bubble magnetic a memory units not implantes, its use for the duplication of bubbles and its application to be duplicated by a binary element and by a block of binary elements

Bubble magnetic a memory units not implantes, its use for the duplication of bubbles and its application to be duplicated by a binary element and by a block of binary elements

机译:气泡磁性存储单元,不是植入物,其用于气泡复制,其应用将由二进制元素和二进制元素块复制

摘要

The invention relates to a bubble magnetic memory comprising a first layer of magnetic material 4 being provided with a crystallographic axis 112 and comprising assemblies units implantes 2 are not contiguous and aligned to the propagation of bubbles 12 in a second magnetic layer 5, these patterns 2 possessing a shape such that two cavities 6 are demarcated between two adjacent motifs, characterized in that each assembly comprises a shaft 10, such as the units 2 of said assembly are disposed symmetrically with respect to this axis, these assemblies being disposed parallel to the crystallographic axis 112 of the first layer of material, and in that it comprises, associated with each set, an electrical conductor 14 enabling the duplication of the bubbles and having an axis of the different 16, arranged perpendicularly to the crystallographic axis of the first layer of material, the set of patterns corresponding being traversed by said conductor.
机译:气泡磁存储器技术领域本发明涉及一种气泡磁存储器,其包括具有结晶轴112的第一磁性材料层4,并且包括组件,植入物2不连续并且与气泡12在第二磁性层5中的传播对准,这些图案2具有这样的形状,使得在两个相邻的图案之间划分出两个空腔6,其特征在于,每个组件包括轴10,例如所述组件的单元2相对于该轴线对称地布置,这些组件平行于晶体学布置。第一材料层的轴线112,并且其包括与每个组相关联的电导体14,其能够复制气泡并且具有不同的轴线16,该轴线垂直于第一材料层的结晶学轴线设置。材料,相应的一组图案被所述导体穿过。

著录项

  • 公开/公告号FR2529369B1

    专利类型

  • 公开/公告日1984-11-30

    原文格式PDF

  • 申请/专利权人 COMMISSARIAT A ENERGIE ATOMIQUE;

    申请/专利号FR19820011407

  • 发明设计人

    申请日1982-06-29

  • 分类号G11C11/14;

  • 国家 FR

  • 入库时间 2022-08-22 07:56:01

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