首页> 外国专利> Multilayer electrophotographic recording material comprises a selenium- tellurium first layer and selenium-arsenic containing second layer

Multilayer electrophotographic recording material comprises a selenium- tellurium first layer and selenium-arsenic containing second layer

机译:多层电子照相记录材料包括硒-碲第一层和含硒-砷的第二层

摘要

The recording material comprises a metallic base, for example, of aluminum, a twenty to sixty &mgr;m thick layer of selenium with a content of tellurium ranging between 5 and 30 percent by wt. and a layer of selenium having a thickness ranging between 0.5 and 3 &mgr;m arranged thereon containing 0.5 to 5 percent by wt. of arsenic. Instead of the layer of selenium containing arsenic, there may also be provided a layer of arsenic-triselenside. Preferably, the content of tellurium in the selenium layer containing tellurium, increases either step-by-step or continuously from the metallic base up to the layer of selenium containing arsenic. The electrophotographic recording material has a sensitivity within the region from 600 to 850 nanometers, the surface is stabilized against corona effects, and the material has a good residual potential behavior.
机译:记录材料包括例如铝的金属基底,二十至六十微米厚的硒层,其中碲的含量在5重量%至30重量%之间。硒层的厚度为0.5-3μm,其含量为0.5-5wt%。砷。代替含硒的砷层,也可以提供一层砷-三硒精。优选地,含碲的硒层中碲的含量从金属碱直至含砷的砷层逐步或连续增加。电子照相记录材料具有在600至850纳米范围内的灵敏度,该表面被稳定以抵抗电晕效应,并且该材料具有良好的残留电势特性。

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