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Method for determining the characteristic behavior of a metal- insulator- semiconductor device in a deep depletion mode
Method for determining the characteristic behavior of a metal- insulator- semiconductor device in a deep depletion mode
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机译:用于确定深度耗尽模式下的金属-绝缘体-半导体器件的特性行为的方法
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摘要
First and second voltage sweeps are applied to a metal- insulator- semiconductor device with the device in a deep depletion mode during at least a portion of each sweep. Capacitance-voltage characteristics of the device are determined for at least a portion of each sweep while the device is in the deep depletion mode. Minority carrier generation parameters of the device in the deep depletion mode are determined based on the capacitance-voltage characteristics for the first and second voltage sweeps.
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