Formation of normal resistors by degenerate doping of substrates

摘要

In superconductive integrated circuit a semiconductor substrate is used in combination with normal resistors formed by degenerate doping of the substrate in selected regions. Doping is preferably performed by planar diffusion or ion implantation. Application of the invention to fabrication of a Josephson Atto-Weber gate by forming a normal resistor intermediate the junctions is also disclosed.