FAILURE PRENOTICE DEVICE FOR GAS INSULATED ELECTRIC DEVICE

• 1. 气体绝缘电气设备电弧放电故障的实验模拟装置及方法 [P] . 中国专利： CN110231550B . 2021.04.06
• 2. 一种判断气体绝缘电气设备故障的方法 [P] . 中国专利： CN110220993A . 2019-09-10
• 3. FAILURE PRENOTICE DEVICE FOR GAS INSULATED ELECTRIC DEVICE [P] . 日本专利： JPS5610028A . 1981-02-02

  机译： 气体绝缘电气设备故障检定装置

• 4. TROUBLE PRENOTICE DEVICE FOR GAS INSULATED ELECTRIC EQUIPMENT [P] . 日本专利： JPS6220765B2 . 1987-05-08

  机译： 气体绝缘电气设备的故障排除装置

• 5. TROUBLE PRENOTICE DEVICE FOR GAS INSULATED ELECTRIC EQUIPMENT [P] . 日本专利： JPS5678307A . 1981-06-27

  机译： 气体绝缘电气设备的故障排除装置

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• 4. Experimental Study on Electrical Breakdown for Devices with Micrometer Gaps [J] . MENG Guodong, CHENG Yonghong, DONG Chengye, 等离子体科学和技术（英文版） . 2014,第012期
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• 6. Electrostatic discharge and electrical overstress failures of non-silicon devices. [D] . Hwang, Yu-Chul. 2005
• 7. Geographic and Temporal Variation in Cardiac Implanted Electric Devices to Treat Heart Failure [O] . Laura A. Hatfield, Daniel B. Kramer, Rita Volya, 2016
• 8. A critical re-examination on conduction processes in gas-insulated DC devices at low electric fields [O] . Malte Tschentscher, Christian M. Franck 2018
• 9. Electrical Overstress Failures in Silicon Devices [R] . Lane, C. H. 1972

• 1. Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels [J] . Ngoc Huynh Van ,Jae-Hyun Lee ,Dongmok Whang . 安徽地质 . 2015,第001期
• 2. 浅谈利用六氟化硫气体分解组分判断高压电气设备故障电气设备故障 [C] . 仵思霄 . 2018（第九届）电力行业化学专业技术交流会 . 2018
• 3. 电气设备的故障检测研究——电缆金属护套多点接地在线监测;——变压器铁心多点接地故障定位检测 [A] . 周志成 . 2003