METHOD FOR MANUFACTURING A ISFET AND THUS MANUFACTURED ISFET.

摘要

PCT No. PCT/NL85/00013 Sec. 371 Date Nov. 19, 1985 Sec. 102(e) Date Nov. 19, 1985 PCT Filed Mar. 22, 1985 PCT Pub. No. WO85/04480 PCT Pub. Date Oct. 10, 1985.A process for modifying an oxide surface of a semi-conductor material, for example included in an ISFET, wherein a coating of a polymer is applied to the oxide surface. The polymer is chemically bonded to the oxide surface. Optionally a second coating can comprise metal ion complexing groups. The process can be used for manufacturing an ISFET.