Method of manufacture with encapsulation, of a sensor of the type of sensor and by applying isfet.

摘要

- the invention relates to an electrochemical sensor comprising, in a semi - conductor (a), at least one field effect transistor. The sensor according to the invention comprises: & br / . a substrate (a) having a generally elongate shape, in a direction (x - x ′), & br / of the zones of the source (2), the drain (1) and of the grid (3) formed in a localized region (z ′) which is located on the substrate (a) at the opposite end of a region (z) of the connection pads (71 - 73), & br / of the zones of the drain (1) and a source (2) associated with the electrical contact points (51, 52) respectively connected to the connection pads of the drain (71) and a source (72), by means of conductive tracks provided in the substrate (a), & br / and a protective coating (8) covering the sensor, with the exception of the connection pads (71 - 73) and of the zone of the grid (3).