A METHOD FOR MAKING AN IMPROVED PHOTORESPONSIVE AMORPHOUS SILICON-BASED ALLOY

摘要

A graded bandgap material comprises amorphous Si containing F(a- Si : F) together with a varying amount of a bandgap modifier (e.g. Ge, Sn, C or N). H, may also be incorporated in the material which may be doped. The graded bandgap material may be used in Schottky, MIS and PIN solar cells or in photoconductive or electrophotographic devices.