METHOD OF MAKING A BIPOLAR MICROWAVE P-N-P TRANSISTOR AND BIPOLAR MICROWAVE P-N-P TRANSISTOR AS SUCH

• 1. 具有金刚石集电极和电流隧穿层的P-N二极管和P-N-P异质结双极晶体管 [P] . 中国专利： CN112400237A . 2021-02-23
• 2. 包括屏蔽区的碳化硅双极结型晶体管及制造碳化硅双极结型晶体管的方法 [P] . 中国专利： CN103283027A . 2013-09-04
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  机译： 使双极微波P-N-P晶体管和双极微波P-N-P晶体管这样的方法

• 4. P-N-P TRANSISTOR APPLICABLE IN BIPOLAR INTEGRATED CIRCUIT AND A METHOD FOR MAKING THIS [P] . HU195036B . 1988-03-28

  机译： 适用于双极集成电路的P-N-P晶体管及其制造方法

• 5. P-N-P TRANSISTOR APPLICABLE IN BIPOLAR INTEGRATED CIRCUIT AND A METHOD FOR MAKING THIS [P] . HUT41560A . 1987-04-28

  机译： 适用于双极集成电路的P-N-P晶体管及其制造方法

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• 7. Lateral p-n-p Transistors and Complementary SiC Bipolar Technology [O] . Lanni, Luigia, Malm, Bengt Gunnar, Östling, Mikael, 2014

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