TETRAMETHYLTIN DOPANT SOURCE FOR MOCVD GROWN EPITAXIAL SEMICONDUCTOR LAYERS
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机译:用于金属化学气相沉积(MOCVD)生长的表皮半导体层的四甲基甲基锡掺杂源
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ABSTRACTA metal-organic transport compound that permitsthe growth of readily reproducible tin doped or alloyedepitaxial layers is described. In a MOCVD reactorsystem, a process is performed involving the epitaxialdeposition of a layer of a semiconductor material,including a given elemental species, onto a semiconductorsubstrate maintained within the MOCVD reactor chamber.The elemental species is obtained from the decompositionof a vapor-phase organo-metallic compound consistingessentially of tetramethyltin.
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