Process for making holes with small dimensions, use of this process in making field-effect transistors with a self-aligned sub-micron gate, and transistors made by that process

摘要

the invention relates to a process for making the opening of small size and the use of the process for the manufacture of field effect transistors, gate aligned submicron (7a).as well as the transistors obtained by this process.;in general, the invention consists in etching a via pattern (f), which disappears after use.;the invention finds its application in the field of electronics, more specifically in the manufacture of semiconductor components.;application: a transistor fet.