Methode zur Herstellung einer lichtemittierenden Halbleitervorrichtung

摘要

A method for producing a semiconductor light emitting device wherein a contact layer (7) of InGaAsP is formed on a semiconductor layer (6), including the steps of; forming the InGaAsP contact layer (7) on the semiconductor layer (6); subsequently, forming an InP cover layer (11) on the contact layer (7); cleaning the surface of the InP cover layer (11) by a solution which selectively melts indium; and removing the InP cover layer (11) by a selective etching process