Solar cell with a gradual energy band gap with a semiconductor body made of amorphous silicon

摘要

In a solar cell consisting of amorphous hydrogenised silicon and having the layer sequence p-i-n (1, 2, 3), the i-type layer (3) is made up of a material combination with varying band gaps which produces both a widening and a narrowing of the energy band gap (Eg) in the amorphous silicon. Preferably, the material combination is produced by incorporating carbon or nitrogen and/or by incorporating germanium or tin in the i-type layer (3). The solar cell can be produced relatively simply by HF glow discharge deposition, but is nevertheless outstanding for its maximum light absorption. IMAGE