improved process for producing monocrystalline silicon ingots practically

摘要

Improved the invention relates to a process for producing monocrystalline silicon ingots, in practice, by heating of silicon metal to the - above its melting point in a crucible 10 in the melt, followed by extraction of heat by the bottom 24 of the crucible with a heat exchanger 20 it established a thermal conduction with the bottom. / p & & p & the silicon obtained can be used in particular in the solar cells.