METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING VARIABLE LOAD CONCENTRATION PLANAR JUNCTIONS WITH VERY HIGH BREAKAGE VOLTAGE

摘要

The invention relates to a method for the manufacture of high voltage semiconductor devices having at least one planar junction having a variable load concentration. The method consists of doping with an impregnated load. THE SAME TYPE, IN A MONOCRYSTALLINE SEMICONDUCTOR MATERIAL REGION, A FIRST AREA, THEN A SECOND AREA WHICH COMPRISES THE PREVIOUS AND THUS FOLLOWING, THEN TO CARRY OUT A THERMAL TREATMENT, IN ORDER TO MAKE A PLANAR JUNCTION HAVING A PROFILE IN GRADES AND A CONCENTRATION OF IMPURITY THAT DECREES FROM THE CENTER TO THE PERIPHERY ON A PREDETERMINED EXTEND. / P P IN THIS WAY, THE INTENSITY OF THE SURFACE ELECTRIC FIELD, WHEN THE JUNCTION IS POLARIZED IN REVERSE DIRECTION, IS REDUCED, WHAT MAKES IT POSSIBLE TO ACHIEVE PLANAR JUNCTIONS WITH VERY HIGH BREAKING VOLTAGES OF THE ORDER OF A FEW THOUSANDS OF VOLTS. / P