DYNAMIC MEMORY ELEMENT, MASTER-SLAVE SWITCH, AND PROGRAMMABLE SEQUENTIAL CIRCUITS USING THE DYNAMIC MEMORY ELEMENT

摘要

The invention relates to a dynamic memory element intended for very fast sequential logic circuits. The dynamic memory element according to the invention is constituted by a single field effect transistor 1, normally. BLOCKED, TWO SCHOTTKY GRILLS, AND SOURCE 10 TO THE MASS. THE FIRST GRID 12, NEAR SOURCE 10 IS THE ENTRY OF THE MEMORY ELEMENT. THE SECOND GRID 13, NEAR DRAIN 11, IS CONNECTED TO A CLOCK SIGNAL H. THE DRAIN 11, WHICH CONSTITUTES THE OUTPUT, IS CONNECTED TO A CAPACITIVE CHARGE C. THIS TRANSISTOR IS POWERED BY CLOCK SIGNALS H, WHICH CHARGING THE DRAIN THROUGH THE SCHOTTKY DIODE OF THE SECOND GRID 13. THE ENTRY SIGNAL (EN 12) IS REVERSE ON THE OUTPUT 11 WHEN THE CLOCK SIGNAL IS A LOGIC, AND SET IN MEMORY WHEN THE CLOCK SIGNAL IS A 0 LOGIC. / P P THE ASSOCIATION OF DYNAMIC ELEMENTS ALLOWS TO MAKE SHIFT REGISTERS, FREQUENCY DIVIDERS AND PROGRAMMABLE SEQUENTIAL CIRCUITS. / P