Dynamic memory element and its use in a master slave flipflop and in programmable sequential circuits

摘要

The invention relates to a dynamic memory element intended for very high-speed sequential logic circuits. The element consists of a single field-effect transistor (1), normally blocked, having two Schottky grids, and whose source (10) is earthed. The first grid (12), adjacent to the source (10), is the input for the memory element. The second grid (13), adjacent to the drain (11), is connected to a clock signal (H). The drain (11), which constitutes the output, is connected to a capacitive load (C). This transistor is fed by the clock signals (H) which charge the drain through the Schottky diode of the second grid (13). The input signal (at 12) is inverted in the output (11) when the clock signal is a logic 1, and stored when the clock signal is a logic 0. The combination of dynamic elements makes it possible to construct shift registers, frequency dividers and programmable sequential circuits. IMAGE