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Planargate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
Planargate turn-off field controlled thyristors and planar junction gate field effect transistors, and method of making same
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机译:平面栅极截止场控晶闸管和平面结栅极场效应晶体管及其制造方法
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摘要
Gate turn-off field controlled thyristors having high forward blocking capabilities and high blocking gains, and planar, junction gate field effect transistors having high source-to-drain breakdown voltage capability with high differential blocking gain, include a gate region having a plurality of vertical-walled grooves. The devices are fabricated by preferentially etching one surface of a semiconductor substrate, selectively refilling the grooves with a vapor phase epitaxial growth, forming a plurality of first electrode regions on the same surface and interdigitated with the gate region, and forming a second electrode region on the opposite surface of the substrate.
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