Process for fabricating quantum-well devices utilizing etch and refill techniques

摘要

The present invention teaches a process for fabrication of quantum- well devices, in which the quantum-wells are configured as small islands of GaAs in an AlGaAs matrix. Typically these islands are roughly cubic, with dimensions of about 100 Angstroms per side. To fabricate these, an n- on n+ epitaxial GaAs structure is grown, and then is etched to an e-beam defined patterned twice, and AlGaAs is epitaxially regrown each time. This defines the quantum wells of GaAs in an AlGaAs matrix, and output contacts are then easily formed.