首页> 外国专利> PATTERNING PROCESS USING LADDER-TYPE ORGANOSILOXANE RESIN AND PROCESS FOR PRODUCTION OF ELECTRONIC DEVICES UTILIZING SAID PATTERNING PROCESS

PATTERNING PROCESS USING LADDER-TYPE ORGANOSILOXANE RESIN AND PROCESS FOR PRODUCTION OF ELECTRONIC DEVICES UTILIZING SAID PATTERNING PROCESS

机译:梯型有机硅氧烷树脂的制版工艺和利用上述制版工艺的电子设备生产工艺

摘要

A patterning process is provided wherein a material to be etched is coated with a ladder type organosiloxane resin, the coated resin is irradiated with energy rays according to a desired pattern, the irradiated resin is subjected to a development treatment, and then, the material is etched by using the resin left after the development as a mask. The ladder type organosiloxane resin used is represented by the formula: ##STR1## wherein each R.sub.1 is independently selected from alkyl (Cl-6) groups, and phenyl and halophenyl groups, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are independently selected from hydrogen, alkoxy (Cl- 3) groups, a hydroxyl group and alkyl (Cl-3) groups, and n is a number giving a Mw of about 1,000 to about 1,000,000. The patterning process can be advantageously employed for the production of electronic devices.
机译:提供一种构图工艺,其中用梯型有机硅氧烷树脂涂覆要刻蚀的材料,根据所需的图案用能量射线照射该涂覆的树脂,对该被辐照的树脂进行显影处理,然后对该材料进行显影。使用显影后残留的树脂作为掩模进行蚀刻。所用的梯型有机硅氧烷树脂由下式表示:其中每个R.1独立地选自烷基(Cl-6)基团,以及苯基和卤代苯基,R.2,R。 sub.3,R.sub.4和R.sub.5独立地选自氢,烷氧基(Cl-3),羟基和烷基(Cl-3),并且n是给出Mw为约1,000至约1,000,000。图案化工艺可以有利地用于电子设备的生产。

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