GALLIUM ARSENIDE MATERIAL AND PROCESS EVALUATION BY MEANS OF PULSED PHOTOCONDUCTANCE IN TEST DEVICES

摘要

A method is disclosed for determining characteristics of semi- insulating gallium arsenide that can be used to evaluate the suitability of the material for semiconductor processing. An n-channel test device formed on a substrate of semi-insulating gallium arsenide is illuminated with pulses of light. The decay in the photoconductance that occurs due to the illumination is measured in order to enable characterization of the shallow acceptor impurities which compensate the deep donors in the semi-insulating gallium arsenide.