INVERSION TYPE HIGH ELECTRON MOBILITY TRANSISTOR DEVICE

摘要

PURPOSE:To obtain high mobility two-dimensional electrons and make contact resistances of electrodes small and provide high speed characteristics by a method wherein the growth of AlGaAs is temporarily discontinued halfway and a planar doping layer of Si is provided. CONSTITUTION:A nondoped AlGaAs layer is made to grow by the application of molecular beams from the sources of three elements, Al, Ga and As. Then application of Al and Ga is discontinued and Si and As are applied to make growth of the thickness of single-atom layer of Si. This is a process for forming a very thin doping layer of the thickness of the order of the layer of atoms and the layer is called and atomic planar doping layer. Then application of Si is discontinued and AlGaAs is made to grow again and, further, the planar doping player of Si is formed again. Thus, growths of the Si planar doping layers are repeated 3-4 times halfway the growth of the AlGaAs layer to form an electron supply layer 3.