METHOD OF MOLECULAR BEAM EPITAXIAL GROWTH AND MOLECULAR BEAM SOURCE

摘要

PURPOSE:To prevent admixing of oxide in a growth layer and to control accurately an amount of an evaporating material to reach a substrate, by making a growing material which becomes a gas molecule by heating reach the growth substrate. CONSTITUTION:The hydrogen gas 9 is introduced from the hydrogen feed part 2a through the purifying device 11 and the flow rate adjustor 12 to the crucible 2 having the growing material 1 and the growing material 1 is heated in a hydrogen gas flow. The gas molecule 4 of the vaporized growing material forms the gas molecule flow 5 by the flow of the hydrogen gas 9, reaches the substrate 7, and grows on the surface. Oxides on the surface and interior of the growing material 1 are reduced with the hydrogen gas and removed, so that admixing of the oxides in the growth layer is prevented. An amount of transportation of the gas molecle can be controlled by the flow rate adjustor 12. For example, the two molecular beam sources 6 having Ga and As are used and an improved GaAs layer of molecular beam epitaxial growth having no admixture of oxides can be formed on the GaAs substrate 7.