MAGNETRON SPUTTERING APPARATUS HAVING SEPARATION LIMIT MAGNETIC FIELD SEPARATING TARGET AND MAGNETICALLY INTENSIFIED R.F. BIAS

摘要

A first target for a magnetron sputter device has a planar annular emitting surface bounded by an inner radius R1 and an outer radius R2. A second target has a sloped emitting surface defined by a side wall of a frustum of a cone. The second target is limited by an inner radius R3 and outer radius R4. R3 is greater than R2. Each target element has pins in diametrically opposite holes to assist in holding the target elements in situ in bayonet slots in the sputter device. The targets are fit closely in cooling rings so that as the targets heat during operation, thermal expansion of the targets assists thermal conduction into the cooling rings. A coil is formed behind the workpiece to act as a mirror to the plasma. The field of the coil moves the plasma away from the workpiece which permits putting high power R.F. bias on the workpiece. The R.F. bias in combination with gas heating the wafer from behind aids in sputtering a coating of superior conformality.