首页> 外国专利> VERTICAL TYPE VAPOR GROWTH EQUIPMENT FOR ORGANIC METAL THERMAL DECOMPOSITION METHOD

VERTICAL TYPE VAPOR GROWTH EQUIPMENT FOR ORGANIC METAL THERMAL DECOMPOSITION METHOD

机译:用于有机金属热分解法的垂直型蒸气生长设备

摘要

PURPOSE:To prevent the adherence of particulate dust to the surface of crystal substrate, and realize crystal growth of high quality, by providing a part member capable of transferring vertically above the crystal substrate arranged in a growth chamber. CONSTITUTION:Above a crystal substrate 2, a part member 6 is installed, which is capable of transferring vertically and has an area larger than the substrate 2. While the inside of a growth chamber is vaccumized, hydrogen gas is introduced, and temperature is raised, the part member 6 is transferred downward to cover the substrate 2. During the period of crystal growth, the part member 6 is transferred upward and is put close to an introducing inlet 12 of material gas to make the member function as a diffusion plate. The adherence of particulate dust to the surface of the substrate 2 is prevented, and crystal growth of high quality is realized, thereby.
机译:目的:通过提供能够在布置在生长室中的晶体基板上方垂直移动的部件,防止颗粒灰尘附着到晶体基板的表面,并实现高质量的晶体生长。组成:在晶体基板2上方,安装了一个部件6,该部件能够垂直传输并具有比基板2更大的面积。在对生长室进行真空处理时,会引入氢气并提高温度然后,将部分构件6向下传送以覆盖基板2。在晶体生长期间,将部分构件6向上传送并靠近原料气体的引入入口12,以使该构件用作扩散板。防止了颗粒灰尘附着在基板2的表面上,从而实现了高质量的晶体生长。

著录项

  • 公开/公告号JPS6292311A

    专利类型

  • 公开/公告日1987-04-27

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP19850231293

  • 发明设计人 MUTO YUHEI;TANAKA HIROKAZU;

    申请日1985-10-18

  • 分类号H01L21/205;

  • 国家 JP

  • 入库时间 2022-08-22 07:23:07

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